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aft05mp075nr1 AFT05MP075GNR1 1 rf device data freescale semiconductor, inc. rf power ldmos transistors high ruggedness n--channel enhancement--mode lateral mosfets designed for mobile two--way radio applications with frequencies from 136 to 520 mhz. the high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier applications in mobile radio equipment. typical performance: 12.5 v, t a =25 ? c, cw frequency g ps (db) ? d (%) p out (w) 136 mhz 21.0 68.0 76 450--520 mhz (1) 14.6 65.8 75 520 mhz (2) 18.5 68.5 70 load mismatch/ruggedness frequency (mhz) signal type vswr p in (w) test voltage result 520 (2) cw > 65:1 at all phase angles 2 (3 db overdrive) 17 no device degradation 1. measured in 450--520 mhz uhf broadband reference circuit. 2. measured in 520 mhz narrowband test circuit. features ? characterized for operation from 136 to 520 mhz ? unmatched input and output allowing wide frequency range utilization ? integrated esd protection ? integrated stab ility enhancements ? wideband ? full power across the band ? exceptional thermal performance ? extreme ruggedness ? high linearity for: tetra, ssb, lte ? in tape and reel. r1 suffix = 500 units, 44 mm tape width, 13--inch reel. typical applications ? output stage vhf band mobile radio ? output stage uhf band mobile radio document number: aft05mp075n rev. 1, 8/2014 freescale semiconductor technical data 136?520 mhz, 70 w, 12.5 v broadband rf power ldmos transistors aft05mp075nr1 AFT05MP075GNR1 to--270wb--4 aft05mp075nr1 to--270wbg--4 AFT05MP075GNR1 figure 1. pin connections note: exposed backside of the package is the source terminal for the transistors. (top view) drain a drain b gate a gate b ? freescale semiconductor, inc., 2013?2014. a ll rights reserved.
2 rf device data freescale semiconductor, inc. aft05mp075nr1 AFT05MP075GNR1 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +40 vdc gate--source voltage v gs --6.0, +12 vdc operating voltage v dd 17, +0 vdc storage temperature range t stg --65 to +150 ? c case operating temperature range t c ?40 to +150 ? c operating junction temperature range (1,2) t j ?40 to +225 ? c total device dissipation @ t c =25 ? c derate above 25 ? c p d 690 3.45 w w/ ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 80 ? c, 70 w cw, 12.5 vdc, i dq(a+b) = 400 ma, 520 mhz r ? jc 0.29 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2, passes 2500 v machine model (per eia/jesd22--a115) a, passes 250 v charge device model (per jesd22--c101) iv, passes 2000 v table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 ? c table 5. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =40vdc,v gs =0vdc) i dss ? ? 3 ? adc zero gate voltage drain leakage current (v ds = 12.5 vdc, v gs =0vdc) i dss ? ? 2 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 600 nadc on characteristics gate threshold voltage (v ds =10vdc,i d = 295 ? adc) v gs(th) 1.7 2.1 2.5 vdc drain--source on--voltage (v gs =10vdc,i d =3.0adc) v ds(on) ? 0.14 ? vdc forward transconductance (4) (v gs =10vdc,i d =8adc) g fs ? 7.3 ? s 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. 4. each side of device measured separately. (continued)
aft05mp075nr1 AFT05MP075GNR1 3 rf device data freescale semiconductor, inc. table 5. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit dynamic characteristics (1) reverse transfer capacitance (v ds = 12.5 vdc ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 2.3 ? pf output capacitance (v ds = 12.5 vdc ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 64 ? pf input capacitance (v ds = 12.5 vdc, v gs =0vdc ? 30 mv(rms)ac @ 1 mhz) c iss ? 148 ? pf functional tests (2) (in freescale test fixture, 50 ohm system) v dd = 12.5 vdc, i dq(a+b) = 400 ma, p in =1w,f=520mhz common--source amplifier output power p out ? 70 ? w drain efficiency ? d ? 68.5 ? % load mismatch/ruggedness (in freescale test fixture, 50 ohm system) i dq(a+b) = 400 ma frequency (mhz) signal type vswr p in (w) test voltage, v dd result 520 cw > 65:1 at all phase angles 2 (3 db overdrive) 17 no device degradation 1. each side of device measured separately. 2. measurements made with device in straight lead configuration before any lead forming oper ation is applied. lead forming is used for gull wing (gn) parts.
4 rf device data freescale semiconductor, inc. aft05mp075nr1 AFT05MP075GNR1 typical characteristics 20 1 300 010 5 v ds , drain--source voltage (volts) figure 2. capacitance versus drain--source voltage c, capacitance (pf) 10 15 100 measured with ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc c rss c iss c oss 0 5 4 v ds , drain--source voltage (volts) figure 3. drain current versus drain--source voltage 2 v gs =3.75vdc note: measured with both sides of the transistor tied together. 4 3 1 8121620 i ds , drain current (amps) 3vdc t a =25 ? c 2.5 vdc 250 90 t j , junction temperature ( ? c) figure 4. mttf versus junction temperature -- cw note: mttf value represents the total cumulative operating time under indicated test conditions. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 7 10 6 10 4 110 130 150 170 190 mttf (hours) 210 230 10 8 10 5 0 6 7 v dd = 12.5 vdc i d =6.3amps 9.4 amps 7.8 amps 3.5 vdc 3.25 vdc 9 8 10 11 2 6 10 14 18 note: each side of device measured separately.
aft05mp075nr1 AFT05MP075GNR1 5 rf device data freescale semiconductor, inc. 520 mhz narrowband production test fixture aft05mp075n rev. 1 cut out area coax1 coax2 coax3 coax4 c1 b1 l1 c15 c4 c5 c6 c7 l2 l3 c18 c17 c16 c10 c21 c22 c24 c25 l4 c28 c27 c26 c30 c2 c3 c8* c9 c9 c3 c11 b2 c12 c13 c14 c19 c20 c23* c29 *c8 and c23 are mounted vertically. figure 5. aft05mp075nr1 narrowband test circuit component layout ? 520 mhz table 6. aft05mp075nr1 narrowband test circuit component designations and values ? 520 mhz part description part number manufacturer b1, b2 ferrite beads 2743019447 fair-rite c1, c11 22 ? f, 35 v, tantalum capacitors t491x226k035at kemet c2, c12, c18, c28 0.1 ? f chip capacitors cdr33bx104akws avx c3, c13 220 nf chip capacitors c1812c224k5rac-tu kemet c4, c14 2.2 ? f chip capacitors c1825c225j5rac-tu kemet c5 5.1 pf chip capacitor atc100b5r1ct500xt atc c6, c7 20 pf chip capacitors atc100b200jt500xt atc c8 16 pf chip capacitor atc100b160jt500xt atc c9 36 pf chip capacitor atc100b360jt500xt atc c10 2.7 pf chip capacitor atc100b2r7bt500xt atc c15, c25 240 pf chip capacitors atc100b241jt200xt atc c16, c26 2.2 ? f chip capacitors g2225x7r225kt3ab atc c17, c27 0.1 ? f chip capacitors c1812f104k1rac--tu kemet c19, c20, c29, c30 470 ? f, 63 v electrolytic capacitors mcgpr63v477m13x26-rh multicomp c21 51 pf chip capacitor atc100b510gt500xt atc c22, c24 100 pf chip capacitors atc100b101jt500xt atc c23 24 pf chip capacitor atc100b240jt500xt atc l1, l2 5.0 nh inductors a02tklc coilcraft l3, l4 17.5 nh inductors ga3095--alc coilcraft coax1, 2, 3, 4 25 ? semi rigid coax, 2.4 ? shield length ut-141c-25 micro-coax pcb 0.030 ? , ? r =2.55 ad255a arlon
6 rf device data freescale semiconductor, inc. aft05mp075nr1 AFT05MP075GNR1 z1 0.366 ?? 0.082 ? microstrip z2, z15 0.010 ?? 0.125 ? microstrip z3, z16 0.018 ?? 0.125 ? microstrip z4, z17 0.135 ?? 0.125 ? microstrip z5, z18 0.100 ?? 0.125 ? microstrip z6, z19 0.430 ?? 0.740 ? microstrip z7*, z20* 0.726 ?? 0.058 ? microstrip * line length includes microstrip bends z8*, z21* 0.672 ?? 0.150 ? microstrip z9, z22 0.290 ?? 0.522 ? microstrip z10, z23 0.590 ?? 0.230 ? microstrip z11, z24 0.030 ?? 0.230 ? microstrip z12, z25 0.010 ?? 0.230 ? microstrip z13 0.154 ?? 0.082 ? microstrip z14 0.100 ?? 0.082 ? microstrip figure 6. aft05mp075nr1 narrowband test circuit schematic ? 520 mhz table 7. aft05mp075nr1 narrowband test circuit microstrips ? 520 mhz description microstrip description microstrip v bias rf input z1 dut z8 z10 coax1 coax2 z11 c1 z9 z22 v bias v supply c15 c19 + z2 z15 c6 c7 z3 z16 c5 z4 z17 z20 z6 z19 rf output coax3 coax4 z14 z5 z18 z7 l1 z13 c8 c9 b1 c2 l2 c11 c12 l3 c16 c17 + + c18 c22 z23 z24 c24 z21 c25 c29 + l4 c26 c27 c28 c10 b2 c3 c4 c13 c14 c20 + v supply c30 + c21 c23 z12 z25
aft05mp075nr1 AFT05MP075GNR1 7 rf device data freescale semiconductor, inc. typical characteristics ? 520 mhz 0 01234 40 20 60 p out , output power (watts) 80 100 v gs , gate--source voltage (volts) figure 7. output power versus gate--source voltage p in , input power (watts) g ps , power gain (db) 14 3 40 60 50 10 30 17 16 15 18 70 80 0.1 ? d , drain efficiency (%) 1 19 20 0 figure 8. power gain, output power and drain efficiency versus input power 20 p out , output power (watts) 13 0.5 1.5 2.5 3.5 4.5 120 v dd = 13.6 vdc, p in =1w f = 520 mhz v dd = 12.5 vdc p in =0.5w v dd = 12.5 vdc, p in =1w v dd = 13.6 vdc, p in =0.5w 21 g ps ? d p out v dd = 12.5 vdc, i dq(a+b) = 400 ma f = 520 mhz v dd = 12.5 vdc, i dq(a+b) = 400 ma, p out =70w f mhz z source ? z load ? 520 0.91 + j2.37 2.56 + j0.27 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. figure 9. narrowband series equivalent source and load impedance ? 520 mhz input matching network device under test output matching network z source z load 50 ? 50 ? + -- -- +
8 rf device data freescale semiconductor, inc. aft05mp075nr1 AFT05MP075GNR1 450--520 mhz uhf broadband reference circuit table 8. 450--520 mhz uhf broadband performance (in freescale reference circuit, 50 ohm system) v dd = 12.5 volts, i dq(a+b) = 500 ma, t a =25 ? c, cw frequency (mhz) g ps (db) ? d (%) p out (w) 450 15.9 65.8 75 485 14.6 72.9 75 520 15.1 71.1 75 table 9. load mismatch/ruggedness (in freescale reference circuit) frequency (mhz) signal type vswr p in (w) test voltage, v dd result 485 cw > 65:1 at all phase angles 6 (3 db overdrive) 17 no device degradation
aft05mp075nr1 AFT05MP075GNR1 9 rf device data freescale semiconductor, inc. 450--520 mhz uhf broadband reference circuit aft05mp075n rev. 1 *c14 is mounted vertically. c15 c16 c17 c18 l1 r1 c1 l2 c3 c5 r2 c4 c6 q1 c7 r3 c8 c10 c12 c24 c11 c13 c14* c9 l3 b1 c19 c20 c21 c22 c23 figure 10. aft05mp075nr1 uhf broadband reference circuit component layout ? 450--520 mhz c2 table 10. aft05mp075nr1 uhf broadband reference circuit component designations and values ? 450--520 mhz part description part number manufacturer b1 ferrite bead 2661000101 fair-rite c1, c3, c4 10 pf chip capacitors atc600f100jt250xt atc c2 15 pf chip capacitor atc600f150jt250xt atc c5, c6 56 pf chip capacitors atc600f560jt250xt atc c7, c8 33 pf chip capacitors atc800b330jt500xt atc c9, c10 30 pf chip capacitors atc800b300jt500xt atc c11, c12 5.6 pf chip capacitors atc800b5r6ct500xt atc c13 16 pf chip capacitor atc800b160jt500xt atc c14 100 pf chip capacitor atc800b101jt500xt atc c15 47 ? f, 16 v tantalum capacitor t491d476k016at kemet c16, c21 1000 pf chip capacitors atc100b102jt50xt atc c17, c20 200 pf chip capacitors atc100b201jt300xt atc c18, c19 100 pf chip capacitors atc100b101jt500xt atc c22 10 ? f chip capacitor grm55dr61h106ka88l murata c23 330 ? f, 35 v electrolytic capacitor mcgpr35v337m10x16-rh multicomp c24 1.5 pf chip capacitor atc800b1r5ct500xt atc l1 120 nh chip inductor 0805cs-121x-lb coilcraft l2 2.55 nh, 3 turn inductor 0906-3jlc coilcraft l3 6 turns, #22 awg, 0.125 ? id 8075 copper magnetic wire beldon q1 rf power ldmos transistor aft05mp075nr1 freescale r1 180 ? , 1/10 w chip resistor rr1220p-181-b-t5 vishay r2, r3 10 ? , 3/4 w chip resistors crcw201010r0fkef vishay pcb 0.030 ? , ? r =4.8 s1000-2, fr4 shengyi
10 rf device data freescale semiconductor, inc. aft05mp075nr1 AFT05MP075GNR1 table 11. aft05mp075nr1 uhf broadband reference circuit microstrips ? 450--520 mhz figure 11. aft05mp075nr1 uhf broadband reference circuit schematic ? 450--520 mhz rf input z1 dut z20 v bias v supply c23 + c1 z8 rf output r1 c15 c19 c21 z39 + b1 c16 c17 c18 c20 c22 z21 z2 z4 l2 z5 z6 c2 z3 l1 c3 z9 c4 r2 z16 z17 l3 r3 c14 z38 c13 z37 c24 z36 z7 z10 z11 c5 c6 z12 z13 z14 z15 z18 z19 z22 z23 z24 z25 c7 c8 z26 z27 z28 z29 c9 c10 z30 z31 z32 z33 z30 z31 c11 c12 z34 z35 z28, z29 0.075 ?? 0.083 ? microstrip z30, z31 0.030 ?? 0.083 ? microstrip z32*, z33* 0.108 ?? 0.073 ? microstrip z34*, z35* 0.109 ?? 0.073 ? microstrip z36 0.177 ?? 0.054 ? microstrip z37 0.470 ?? 0.054 ? microstrip z38 0.130 ?? 0.054 ? microstrip z39 0.200 ?? 0.054 ? microstrip z12, z13 0.015 ?? 0.083 ? microstrip z14, z15 0.065 ?? 0.093 ? microstrip z16, z17 0.050 ?? 0.093 ? microstrip z18, z19 0.110 ?? 0.170 ? microstrip z20, z21 0.110 ?? 0.170 ? microstrip z22, z23 0.050 ?? 0.093 ? microstrip z24, z25 0.017 ?? 0.093 ? microstrip z26, z27 0.048 ?? 0.093 ? microstrip z1 0.250 ?? 0.052 ? microstrip z2 0.059 ?? 0.064 ? microstrip z3 0.060 ?? 0.050 ? microstrip z4 0.054 ?? 0.064 ? microstrip z5 0.200 ?? 0.054 ? microstrip z6*, z7* 0.195 ?? 0.073 ? microstrip z8, z9 0.035 ?? 0.083 ? microstrip z10, z11 0.055 ?? 0.083 ? microstrip description microstrip description microstrip description microstrip * line length includes microstrip bends
aft05mp075nr1 AFT05MP075GNR1 11 rf device data freescale semiconductor, inc. typical characteristics ? 450--520 mhz uhf broadband reference circuit 440 g ps f, frequency (mhz) figure 12. power gain, drain efficiency and output power versus frequency at a constant input power ? 13.6 v 13 17 70 72 70 66 100 90 ? d , drain efficiency (%) ? d g ps , power gain (db) 16.5 16 15.5 15 14.5 14 13.5 450 460 470 490 68 80 p out ,output power (watts) v dd = 13.6 vdc, p in =3w i dq(a+b) = 500 ma 480 p out 74 500 510 530 520 440 g ps f, frequency (mhz) figure 13. power gain, drain efficiency and output power versus frequency at a constant input power ? 12.5 v 13 17 70 72 70 66 100 90 ? d , drain efficiency (%) g ps , power gain (db) 16.5 16 15.5 15 14.5 14 13.5 450 460 470 490 68 80 p out ,output power (watts) v dd = 12.5 vdc, p in =3w i dq(a+b) = 500 ma 480 p out 74 500 510 530 520 ? d
12 rf device data freescale semiconductor, inc. aft05mp075nr1 AFT05MP075GNR1 typical characteristics ? 450--520 mhz uhf broadband reference circuit 0 0 v gs , gate--source voltage (volts) figure 14. output power versus gate--source voltage 140 1 2 345 40 60 80 20 p out , output power (watts) f = 485 mhz 0 0 detail a 40 0.5 1 1.5 2.5 3.5 30 20 10 50 f = 485 mhz v dd = 12.5 vdc, p in =3w detail a v dd = 13.6 vdc p in =3w v dd = 12.5 vdc p in =3w p out , output power (watts) v gs , gate--source voltage (volts) v dd = 13.6 vdc, p in =3w 23 v dd = 13.6 vdc p in =1.5w 100 120 v dd = 13.6 vdc, p in =1.5w v dd = 12.5 vdc p in =1.5w 80 70 60 90 v dd = 12.5 vdc p in =1.5w 0 40 100 120 figure 15. power gain, output power and drain efficiency versus input power and frequency p in , input power (watts) g ps , power gain (db) 13 17 15 0.05 5 19 18 1 ? d , drain efficiency (%) p out , output power (watts) 16 14 80 60 20 0.1 485 mhz p out 450 mhz v dd = 12.5 vdc, i dq(a+b) = 500 ma g ps ? d 450 mhz 520 mhz 450 mhz 520 mhz 485 mhz 485 mhz 520 mhz
aft05mp075nr1 AFT05MP075GNR1 13 rf device data freescale semiconductor, inc. 450--520 mhz uhf broadband reference circuit z o =2 ? z load f = 450 mhz z source f = 530 mhz f = 450 mhz f = 530 mhz v dd = 12.5 vdc, i dq(a+b) = 500 ma, p out =75w f mhz z source ? z load ? 450 0.55 + j0.59 0.75 + j0.30 460 0.72 + j0.81 0.82 + j0.39 470 0.79 + j0.93 0.90 + j0.42 480 0.71 + j0.86 0.92 + j0.44 490 0.62 + j0.78 0.93 + j0.41 500 0.60 + j0.74 0.89 + j0.39 510 0.64 + j0.72 0.85 + j0.39 520 0.69 + j0.78 0.79 + j0.39 530 0.70 + j1.03 0.74 + j0.43 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 16. uhf broadband series equivalent source and load impedance ? 450--520 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
14 rf device data freescale semiconductor, inc. aft05mp075nr1 AFT05MP075GNR1 package dimensions
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aft05mp075nr1 AFT05MP075GNR1 17 rf device data freescale semiconductor, inc.
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20 rf device data freescale semiconductor, inc. aft05mp075nr1 AFT05MP075GNR1 product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in over--molded plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an3789: clamping of high power rf transistors and rfics in over--molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 feb. 2013 ? initial release of data sheet 1 aug. 2014 ? tape and reel information: corrected tape width informa tion from 32--inch reel to 44--inch reel to reflect actual reel size, p. 1 ? replaced case outline to--270wb--4, issue d with issue e, pp. 14?16. added notes 9 and 10, four exposed source tabs, and a feature control frame to e and e5 on p. 14. removed style and pin information from notes section on p. 16.
aft05mp075nr1 AFT05MP075GNR1 21 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2013?2014 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: aft05mp075n rev. 1, 8/2014

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